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PDF MMBTSB1689W Data sheet ( Hoja de datos )
| Número de pieza | MMBTSB1689W | |
| Descripción | Silicon Epitaxial Planar Transistor | |
| Fabricantes | SEMTECH ELECTRONICS | |
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MMBTSB1689W
PNP Silicon Epitaxial Planar Transistors
for low frequency amplifier and driver applications
www.DataSheet4U.com
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1) Single pulse, Pw = 1 ms.
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 200 mA
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE= 10 µA
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 25 mA
Collector Cutoff Current
at -VCB = 15 V
Emitter Cutoff Current
at -VEB = 6 V
Transition Frequency
at -VCE = 2 V, IE = 200 mA, f = 100 MHz
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Symbol
-VCBO
-VCEO
-VEBO
-IC
-ICP
Ptot
TJ
Ts
Value
15
12
6
1.5
3 1)
200
150
-55 to +150
Unit
V
V
V
A
A
mW
OC
OC
Symbol
hFE
Min.
270
-V(BR)CBO
15
-V(BR)CEO
12
-V(BR)EBO
6
-VCEsat
-ICBO
-
-
-IEBO
-
fT -
Cob -
Typ.
-
-
-
-
-
-
-
400
12
Max.
680
Unit
-
-V
-V
-V
0.2 V
100 nA
100 nA
- MHz
- pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/01/2006
1 page | ||
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Hoja de datos destacado
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