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PDF MMBTSC1623 Data sheet ( Hoja de datos )

Número de pieza MMBTSC1623
Descripción Silicon Epitaxial Planar Transistor
Fabricantes SEMTECH ELECTRONICS 
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No Preview Available ! MMBTSC1623 Hoja de datos, Descripción, Manual

MMBTSC1623
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
The transistor is subdivided into four groups,
O, Y, G and L, according to its DC current gain
www.DataSheet4U.com
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 6 V, IC = 1 mA Current Gain Group
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Cutoff Current
at VCB = 60 V
Emitter Cutoff Current
at VEB = 5 V
Collector Saturation Voltage
at IC = 100 mA, IB = 10 mA
Base Saturation Voltage
at IC = 100 mA, IB = 10 mA
Gain Bandwidth Product
at VCE = 6 V, IC = 10 mA
Output Capacitance
at VCB = 6 V, f = 1 MHz
SOT-23 Plastic Package
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
Value
60
50
5
100
200
150
- 55 to + 150
Unit
V
V
V
mA
mW
OC
OC
Symbol Min.
O hFE
90
Y hFE 135
G hFE 200
L hFE 300
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
fT
COB
60
50
5
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
250
3
Max.
180
270
400
600
-
-
-
0.1
0.1
0.3
1
-
-
Unit
-
-
-
-
V
V
V
µA
µA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/09/2006

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