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PDF MMBTSC2411 Data sheet ( Hoja de datos )
| Número de pieza | MMBTSC2411 | |
| Descripción | Silicon Epitaxial Planar Transistor | |
| Fabricantes | SEMTECH ELECTRONICS | |
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MMBTSC2411
NPN Silicon Epitaxial Planar Transistor
The transistor is subdivided into three groups P,
Q and R according to its DC current gain.
www.DataSheet4U.com
Absolute Maximum Ratings (T a = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T a =25 OC
Parameter
DC Current Gain
at VCE = 3 V, IC = 100 mA
Collector Base Breakdown Voltage
at IC= 100 µA
Collector Emitter Breakdown Voltage
at IC= 1 mA
Emitter Base Breakdown Voltage
at IE= 100 µA
Collector Cutoff Current
at VCB= 20 V
Emitter Cutoff Current
at VEB = 4 V
Collector Saturation Voltage
at IC = 500 mA, IB = 50 mA
Transition frequency
at VCE = 5 V, -IE = 20 mA, f = 100 MHz
Output Capacitance
at VCB = 10 V, IE = 0 A, f = 1 MHz
®
SOT-23 Plastic Package
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
Value
40
32
5
500
200
150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
Symbol Min. Typ. Max. Unit
P hFE 82 - 180 -
Q hFE 120 - 270 -
R hFE 180 - 390 -
V(BR)CBO
40
-
-
V
V(BR)CEO
32
-
-
V
V(BR)EBO
5
-
-
V
ICBO
-
-
1 µA
IEBO
-
-
1 µA
VCE(sat)
-
- 0.4 V
fT - 250 - MHz
Cob - 6 - pF
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