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PDF MMBTSC2715 Data sheet ( Hoja de datos )
| Número de pieza | MMBTSC2715 | |
| Descripción | Silicon Epitaxial Planar Transistor | |
| Fabricantes | SEMTECH ELECTRONICS | |
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MMBTSC2715
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier applications
for FM IF, OSC stage and AM CONV. IF stage
The transistor is subdivided into three groups, R,
O and Y, according to its DC current gain.
www.DataSheet4U.com
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
TS
Value
35
30
4
50
10
200
125
-55 to +125
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at VCE = 12 V, IC = 2 mA
Current Gain Group
Collector Cutoff Current
at VCB = 35 V
Emitter Cutoff Current
at VEB = 4 V
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Current Gain Bandwidth Product
at VCE = 10 V, IC = 1 mA
Output Capacitance
at VCB = 10 V, f = 1 MHz
Power Gain
at VCE = 6 V, -IE = 1 mA, f = 10.7 MHz
R
O
Y
Symbol
hFE
hFE
hFE
ICBO
IEBO
VCE(sat)
VBE(sat)
fT
Cob
Gpe
Min.
40
70
120
-
-
-
-
100
-
27
Typ. Max. Unit
- 80 -
- 140 -
- 240 -
- 0.1 µA
- 0.1 µA
- 0.4 V
- 1V
- 400 MHz
2 3.2 pF
30 33 dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/05/2006
1 page | ||
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| PDF Descargar | [ Datasheet MMBTSC2715.PDF ] | |
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