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PDF TSB1132 Data sheet ( Hoja de datos )
| Número de pieza | TSB1132 | |
| Descripción | Low Frequency PNP Transistor | |
| Fabricantes | Taiwan Semiconductor Company | |
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TSB1132
Low Frequency PNP Transistor
www.DataSheet4U.com
Pin assignment:
1. Base
2. Collector
3. Emitter
BVCEO = - 32V
Ic = - 1A
VCE (SAT), =- 0.15V(typ.) @Ic / Ib =- 0.5A /- 50mA
Features
Ordering Information
Low VCE (SAT).
Excellent DC current gain characteristics
Structure
Part No.
TSB1132CY
Packing
Tape & Reel
Epitaxial planar type.
PNP silicon transistor
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Package
SOT-89
Marking
BK
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
DC
Pulse
SOT-89
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 10mS, Duty <= 50%
2. When mounted on a 40 x 40 x 0.7mm ceramic board
Electrical Characteristics
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Limit
- 40V
- 32V
-5
-1
- 2.5 (note 1)
0.6
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
W
oC
oC
Ta = 25 oC unless otherwise noted
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
IC = - 50uA, IE = 0
BVCBO
- 40
V
IC = - 1mA, IB = 0
BVCEO
- 32
V
IE = - 50uA, IC = 0
BVEBO
-5
V
VCB = - 20V, IE = 0
ICBO
- 0.5 uA
VEB = - 4V, IC = 0
IEBO
-0.5 uA
IC / IB = - 500mA / - 50mA VCE(SAT)
- 0.15 - 0.5 V
VCE = - 3V, IC = - 0.1A
hFE 82
390
VCE = - 5V, IC = - 50mA,
fT
150 MHz
f = 100MHz
Output Capacitance
VCB = - 10V, f=1MHz
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Cob
20 30 pF
Classification Of hFE
Rank
P
Range
82 - 180
Q
120 - 270
R
180 - 390
TSB1132
1-1 2003/12 rev. B
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TSB1132.PDF ] | |
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