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PDF TSB1590 Data sheet ( Hoja de datos )
| Número de pieza | TSB1590 | |
| Descripción | Low Vce(sat) PNP Transistor | |
| Fabricantes | Taiwan Semiconductor Company | |
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TSB1590
Low Vce(sat) PNP Transistor
www.DataSheet4U.com
Pin assignment:
1. Base
2. Emitter
3. Collector
BVCEO = - 20V
Ic = - 1A
VCE (SAT), = - 0.18V(typ.) @Ic / Ib = - 0.5A / - 50mA
Features
Low VCE (SAT).
Excellent DC current gain characteristics
Structure
Epitaxial planar type.
Complementary to TSD2444CX
Ordering Information
Part No.
TSB1590CX
Packing
Tape & Reel
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Package
SOT-23
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
DC
Pulse
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 10mS
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Limit
- 30V
- 20V
-5
-1
- 1.5 (note 1)
0.225
+150
- 55 to +150
Unit
V
V
V
A
W
oC
oC
Electrical Characteristics
Ta = 25 oC unless otherwise noted
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
IC = - 50uA, IE = 0
BVCBO
- 30
--
-- V
IC = - 1mA, IB = 0
BVCEO
- 20
--
-- V
IE = - 50uA, IC = 0
BVEBO
-5
--
-- V
VCB = - 20V, IE = 0
ICBO -- -- - 0.5 uA
VEB = - 4V, IC = 0
IEBO -- -- -0.5 uA
IC / IB = - 500mA / - 50mA VCE(SAT) -- - 0.18 - 0.4 V
VCE = - 3V, IC = - 0.1A
hFE 82 -- 390
VCE = - 5V, IC = - 50mA,
fT -- 150 -- MHz
f = 100MHz
Output Capacitance
VCB = - 10V, f=1MHz
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Cob -- 15 -- pF
Classification Of hFE
Rank
P
Range
82 - 180
Q
120 - 270
R
180 - 390
TSB1590
1-3 2003/12 rev. A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TSB1590.PDF ] | |
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