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Número de pieza | TSM10N60 | |
Descripción | 600V N-Channel Power MOSFET | |
Fabricantes | Taiwan Semiconductor Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM10N60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Preliminary
TSM10N60
600V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 0.75 @ VGS =10V
ID (A)
4.75
General Description
The TSM10N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Block Diagram
● Low RDS(ON) 0.75Ω (Max.)
● Low gate charge typical @ 45nC (Typ.)
● Low Crss typical @ 20pF (Typ.)
● Fast Switching
Ordering Information
Part No.
TSM10N60CI C0
Package
ITO-220
Packing
50pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta = 25ºC
Ta = 100ºC
VDS
VGS
ID
Pulsed Drain Current*
Avalanche Current (Single) (Note 2)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Maximum Power Dissipation @Ta = 25oC
Operating Junction Temperature
IDM
IAS
EAS
IAR
EAR
PD
TJ
Storage Temperature Range
* Limited by maximum junction temperature
TSTG
N-Channel MOSFET
Limit
600
±30
9.5
5.8
38
9.5
487
38
14.5
43
150
-55 to +150
Unit
V
V
A
A
A
A
mJ
A
mJ
W
ºC
oC
1/6 Version: Preliminary
1 page Preliminary
TSM10N60
600V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
ITO-220 Mechanical Drawing
ITO-220 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 10.04
10.07
0.395
0.396
B 6.20 (typ.)
0.244 (typ.)
C 2.20 (typ.)
0.087 (typ.)
D 1.40 (typ.)
0.055 (typ.)
E 15.0
15.20
0.591
0.598
F 0.52
0.54
0.020
0.021
G 2.35
2.73
0.093
0.107
H 13.50
13.55
0.531
0.533
I 1.11
1.49
0.044
0.058
J 2.60
2.80
0.102
0.110
K 4.49
4.50
0.176
0.177
L 1.15 (typ.)
0.045 (typ.)
M 3.03
3.05
0.119
0.120
N 2.60
2.80
0.102
0.110
O 6.55
6.65
0.258
0.262
5/6 Version: Preliminary
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TSM10N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM10N60 | 600V N-Channel Power MOSFET | Taiwan Semiconductor Company |
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