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PDF TSM1N45D Data sheet ( Hoja de datos )
| Número de pieza | TSM1N45D | |
| Descripción | 450V N-Channel Power MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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Preliminary
TSM1N45D
450V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
SOP-8
Pin Definition:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
8. Drain 1
7. Drain 1
6. Drain 2
5. Drain 2
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
450 4.25 @ VGS =10V
ID (A)
0.25
General Description
The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS
technology process.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand higher energy pulse in the avalanche and commutation mode. There devices are well
suited for electronic ballasts base and half bridge configuration.
Features
Block Diagram
● Low gate charge @ typical 6.5nC
● Low Crss @ typical 6.5pF
● Avalanche energy specified
● Improved dv/dt capability
● Gate-Source Voltage ±50V guaranteed
Ordering Information
Part No.
Package
Packing
TSM1N45DCS RL SOP-8 2.5Kpcs / 13” Reel
Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulse Drain to Source Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Maximum Power Dissipation @Ta = 25oC
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJA
Limit
450
±50
0.5
4
108
0.5
0.25
5.5
0.9
-55 to +150
Limit
80
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
oC
Unit
oC/W
1/6 Version: Preliminary
1 page  
Preliminary
TSM1N45D
450V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
SOP-8 Mechanical Drawing
SOP-8 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX.
A
4.80
5.00
0.189
0.196
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.054
0.068
D
0.35
0.49
0.014
0.019
F 0.40 1.25 0.016 0.049
G 1.27BSC
0.05BSC
K
0.10
0.25
0.004
0.009
M 0º 7º 0º 7º
P
5.80
6.20
0.229
0.244
R
0.25
0.50
0.010
0.019
5/6 Version: Preliminary
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM1N45D.PDF ] | |
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