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PDF TSM2306 Data sheet ( Hoja de datos )

Número de pieza TSM2306
Descripción 30V N-Channel MOSFET
Fabricantes Taiwan Semiconductor Company 
Logotipo Taiwan Semiconductor Company Logotipo



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No Preview Available ! TSM2306 Hoja de datos, Descripción, Manual

TSM2306
30V N-Chawnwwn.DealtaMSheOet4SU.cFomET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
30 57 @ VGS =10V
94 @ VGS =4.5V
Features
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
Load Switch
PA Switch
Ordering Information
Part No.
Package
Packing
TSM2306CX RF SOT-23 3Kpcs / 7” Reel
Block Diagram
N-Channel MOSFET
ID (A)
3.5
2.8
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
Ta = 25oC
Ta = 75oC
VDS
VGS
ID
IDM
IS
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t 5 sec.
RӨJF
RӨJA
Limit
30
±20
3.5
±20
1.7
1.25
0.8
+150
-55 to +150
Limit
75
130
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/6 Version: A09

1 page




TSM2306 pdf
TSM2306
30V N-Chawnwwn.DealtaMSheOet4SU.cFomET
SOT-23 Mechanical Drawing
SOT-23 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX.
A 0.95 BSC
0.037 BSC
A1 1.9 BSC
0.074 BSC
B
2.60
3.00
0.102
0.118
C
1.40
1.70
0.055
0.067
D
2.80
3.10
0.110
0.122
E
1.00
1.30
0.039
0.051
F
0.00
0.10
0.000
0.004
G
0.35
0.50
0.014
0.020
H
0.10
0.20
0.004
0.008
I
0.30
0.60
0.012
0.024
J 5º 10º 5º 10º
Marking Diagram
06 = Device Code
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/6 Version: A09

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