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PDF TSM2N60S Data sheet ( Hoja de datos )
| Número de pieza | TSM2N60S | |
| Descripción | 600V N-Channel Power MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
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TSM2N60S
600V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
SOT-223
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 5 @ VGS =10V
ID (A)
0.6
General Description
The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
Block Diagram
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
Ordering Information
Part No.
TSM2N60SCW RP
Package
Packing
SOT-223 2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
Drain Source Voltage Slope (VDS = 480V, ID=0.8A, TJ = 125oC)
Total Maximum Power Dissipation @Ta = 25oC
IS
dv/dt
PDTOT
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
RӨJC
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RӨJA
Limit
600
±30
0.6
1.5
1
50
2.5
+150
-55 to +150
Limit
15
55.8
Unit
V
V
A
A
A
V/ns
W
ºC
ºC
Unit
ºC/W
ºC/W
1/1 Version: A09
1 page  
Gate Charge Test Circuit & Waveform
TSM2N60S
600V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
5/5 Version: A09
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TSM2N60S.PDF ] | |
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