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PDF TSM3442 Data sheet ( Hoja de datos )
| Número de pieza | TSM3442 | |
| Descripción | 20V N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM3442
Taiwan Semiconductor
N-Channel Power MOSFET
20V, 4A, 70mΩ
FEATURES
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
APPLICATION
● Load Switch
● PA Switch
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS 20 V
VGS = 4.5V
70
RDS(on) (max)
VGS = 2.5V
90
mΩ
Qg 5.4 nC
SOT-26
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
TJ, TSTG
20
±8
4
2.4
8
1.25
- 55 to +150
UNIT
V
V
A
A
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
30 °C/W
Junction to Ambient Thermal Resistance
RӨJA
80 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
,
Document Number: DS_P0000076
1
Version: B15
1 page  
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
TSM3442
Taiwan Semiconductor
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: DS_P0000076
5
Version: B15
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TSM3442.PDF ] | |
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