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PDF TSM3443 Data sheet ( Hoja de datos )
| Número de pieza | TSM3443 | |
| Descripción | 20V P-Channel Enhancement-Mode MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM3443
20V P-Channel MOSFET
SOT-26
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
PRODUCT SUMMARY
VDS (V)
RDSON (mΩ)
60 @ VGS = -4.5V
-20
100 @ VGS = -2.5V
ID (A)
-4.7
-3.8
Features
● Advance Trench Process Technology
● High Density Cell Design fPor Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
Part No.
Package
Packing
TSM3443CX6 RF
SOT-26
3Kpcs / 7” Reel
TSM3443CX6 RFG
SOT-26
3Kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
TA=25oC
TA=70oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ
TJ, TSTG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note 1: Pulse width limited by the Maximum junction temperature
Note 2: Surface Mounted on FR4 Board, t ≤ 5 sec
Symbol
RӨJC
RӨJA
P-Channel MOSFET
Limit
-20
±12
-4.7
-20
-1.7
2
1.3
+150
- 55 to +150
Limit
30
80
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/6 Version: E14
1 page  
TSM3443
20V P-Channel MOSFET
SOT-26 Mechanical Drawing
Unit: Millimeters
Marking Diagram
43 = Device Code
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6 Version: E14
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM3443.PDF ] | |
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