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PDF TSM3460 Data sheet ( Hoja de datos )
| Número de pieza | TSM3460 | |
| Descripción | 20V N-Channel MOSFET w/ESD Protected | |
| Fabricantes | Taiwan Semiconductor Company | |
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TSM3460
www.DataSheet4U.com
20V N-Channel MOSFET w/ESD Protected
Pin assignment:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
VDS = 20V
RDS (on), Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.)
RDS (on), Vgs @ 2.5V, Ids @ 5A =30mΩ (typ.)
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Battery switch application
Block Diagram
Ordering Information
Part No.
TSM3460CX6
Packing
Tape & Reel
3,000/per reel
Package
SOT-26
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @4.5V.
Ta = 25 oC
Ta = 70 oC
Pulsed Drain Current, VGS @4.5V
Diode Forward Current
Maximum Power Dissipation
Ta = 25 oC
Ta = 70 oC
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
VDS
VGS
ID
ID
IDM
Is
PD
TJ, TSTG
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=300uS, Duty < 2%.
Symbol
Rθjf
Rθja
Limit
20V
± 12
6
5
30
1.5
1.3
0.96
- 55 to +150
Limit
35
120
Unit
V
V
A
A
A
A
W
oC
Unit
oC/W
oC/W
TSM3460
1-1 2003/12 rev. F
1 page  
SOT-26 Mechanical Drawing
www.DataSheet4U.com
SOT-26 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 2.70
3.00
0.106
0.118
B 0.25
0.50
0.010
0.020
C 1.90(typ)
0.075(typ)
D 0.95(typ)
0.037(typ)
E 1.50
1.70
0.059
0.067
F 1.05
1.35
0.041
0.053
H 2.60
3.00
0.102
0.118
L 0.60(typ)
0.024(typ)
TSM3460
5-5 2003/12 rev. F
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TSM3460.PDF ] | |
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