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PDF TSM3911D Data sheet ( Hoja de datos )
| Número de pieza | TSM3911D | |
| Descripción | 20V Dual N-Channel MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM3911Dwww.DataSheet4U.com
20V Dual P-Channel MOSFET
SOT-26
Pin Definition:
1. Gate 1 6. Drain 1
2. Source 2 5, Source 1
3. Gate 2 4. Drain 2
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
140 @ VGS = -4.5V
-20 200 @ VGS = -2.5V
300 @ VGS = -1.8V
ID (A)
-2.2
-1.8
-1.5
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
Part No.
Package
TSM3911DCX6 RF SOT-26
Packing
T&R
Dual P-Channel MOSFET
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
Ta = 25 oC
Ta = 70 oC
VDS
VGS
ID
IDM
IS
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
RӨJF
RӨJA
Limit
-20
±8
-2.2
-8
-0.72
1.15
0.73
+150
- 55 to +150
Limit
30
80
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/6 Version: A07
1 page  
TSM3911Dwww.DataSheet4U.com
20V Dual P-Channel MOSFET
SOT-26 Mechanical Drawing
SOT-26 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX.
A
2.70
3.00
0.106
0.118
B
0.25
0.50
0.010
0.020
C 1.90(typ)
0.075(typ)
D 0.95(typ)
0.037(typ)
E
1.50
1.70
0.059
0.067
F
1.05
1.35
0.041
0.053
H
2.60
3.00
0.102
0.118
L 0.60(typ)
0.024(typ)
5/6 Version: A07
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM3911D.PDF ] | |
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