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PDF TSM414K34 Data sheet ( Hoja de datos )
| Número de pieza | TSM414K34 | |
| Descripción | 30V N-Channel MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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Preliminary
TSM414K34
30V N-Channel MOSFET with wSwcwh.DoattatSkheyet4DU.cioomde
SOP-8
Pin Definition:
1. Anode
8. Cathode
2. Anode
7. Cathode
3. Source
6. Drain
4. Gate
5. Drain
MOSFET PRODUCT SUMMARY
VDS (V)
30
RDS(on)(mΩ)
55 @ VGS = 10V
65 @ VGS = 4.5V
ID (A)
4
2
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No.
Package
Packing
TSM414K34CS RL SOP-8 2.5Kpcs / 13” Reel
SCHOTTKY PRODUCT SUMMARY
VRRM (V)
VF (V)
30 0.51
Block Diagram
IF (A)
3
N-Channel MOSFET with Schottky Diode
MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS
ID
Pulsed Drain Current,
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation @ Ta = 25oC
IDM
IS
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
Schottky Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Drain-Source Voltage
Average Forward Current
Non-Peak Repetitive Surge Currentc
VRRM
IF
IFSM
Thermal Performance
Junction to Ambient Thermal Resistance
RӨJA
Notes: a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board using 1 inch sq pad size, t ≤ 10 sec.
C. Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60Hz.
Limit
30
±20
4
20
4
2
+150
-55 ~ +150
30
3
20
62.5
Unit
V
V
A
A
A
W
oC
oC
V
A
A
oC/W
1/4 Version: Preliminary
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TSM414K34.PDF ] | |
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