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PDF TSM4420 Data sheet ( Hoja de datos )
| Número de pieza | TSM4420 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM4420
Preliminarywww.DataSheet4U.com
N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Source
2. Source
3. Source
4. Gate
5, 6, 7, 8. Drain
Features
Advanced trench process technology
High Density Cell Design for Ultra Low
On-Resistance
Fully Characterized Avalanche Voltage and Current
VDS = 25V
ID = 13.5A
RDS (on), Vgs @ 10V, Ids @ 13.5A = 8.5mΩ
RDS (on), Vgs @ 4.5V, Ids @ 11A = 11mΩ
Block Diagram
Ordering Information
Part No.
TSM4420CS
Packing
Tape & Reel
(2,500pcs / Reel)
Package
SOP-8
Absolute Maximum Rating (TA = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
TA = 25 oC
TA = 70 oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
Parameter
Junction-to-case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: 1. Maximum DC current limited by the package
2. 1-in2 2oz Cu PCB board
Symbol
Rθjc
Rθja
Limit
25
±20
13.5
50
2
1.3
+150
-55 to +150
Limit
2.2
50
Unit
V
V
A
W
oC
oC
Unit
oC/W
TSM4420
1-3 2005/08 rev. B
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TSM4420.PDF ] | |
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