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PDF TSM4431 Data sheet ( Hoja de datos )
| Número de pieza | TSM4431 | |
| Descripción | 30V P-Channel MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM4431www.DataSheet4U.com
30V P-Channel MOSFET
SOP-8
Pin Definition:
1. Source
2. Source
3. Source
4. Gate
5, 6, 7, 8. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
-30 40 @ VGS = -10V
70 @ VGS = -4.5V
ID (A)
-5.8
-4.5
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● DC-DC Conversion
● Asynchronous Buck Converter
Ordering Information
Part No.
TSM4431CS RL
Package
SOP-8
Packing
T&R
Block Diagram
P-Channel MOSFET
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
Ta = 25 oC
Ta = 75 oC
VDS
VGS
ID
IDM
IS
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol
RӨJC
RӨJA
Limit
-30
±20
-5.8
-20
-2.3
2.5
1.6
+150
- 55 to +150
Limit
30
50
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/6 Version: A07
1 page  
TSM4431www.DataSheet4U.com
30V P-Channel MOSFET
SOP-8 Mechanical Drawing
SOP-8 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX.
A
4.80
5.00
0.189
0.196
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.054
0.068
D
0.35
0.49
0.014
0.019
F
0.40
1.25 0.016 0.049
G 1.27BSC
0.05BSC
K
0.10
0.25
0.004
0.009
M 0º 7º 0º 7º
P
5.80
6.20
0.229
0.244
R
0.25
0.50
0.010
0.019
5/6 Version: A07
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM4431.PDF ] | |
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