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PDF TSM4835 Data sheet ( Hoja de datos )
| Número de pieza | TSM4835 | |
| Descripción | 30V P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM4835
www.DataSheet4U.com
30V P-Channel Enhancement Mode MOSFET
Pin assignment:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate 5. Drain
VDS = - 30V
RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18mΩ
RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30mΩ
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
High gate voltage
Block Diagram
Ordering Information
Part No.
TSM4835CS
Packing
Tape & Reel
Package
SOP-8
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Maximum Power Dissipation
Ta = 25 oC
Ta > 25 oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
Parameter
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Symbol
Rθja
Limit
- 30
± 25
- 9.5
- 50
2.5
1.6
+150
- 55 to +150
Limit
50
Unit
V
V
A
A
W
W
oC
oC
Unit
oC/W
TSM4835
1-5 2003/12 rev. A
1 page  
SOP-8 Mechanical Drawing
www.DataSheet4U.com
A
16 9
BP
18
G
D
CM
K
R
SOP-8 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 4.80
5.00
0.189
0.196
B 3.80
4.00
0.150
0.157
C 1.35
1.75
0.054
0.068
D 0.35
0.49
0.014
0.019
F 0.40
1.25
0.016
0.049
G 1.27 (typ)
0.05 (typ)
K 0.10
M 0o
0.25
7o
0.004
0o
0.009
7o
P 5.80
6.20
0.229
0.244
F
R 0.25
0.50
0.010
0.019
TSM4835
5-5 2003/12 rev. A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TSM4835.PDF ] | |
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