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Número de pieza | TSM4N60 | |
Descripción | 600V N-Channel Power MOSFET | |
Fabricantes | Taiwan Semiconductor Company | |
Logotipo | ||
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600V N-Channel Power MOSFET
TO-220 ITO-220
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 2.5 @ VGS =10V
ID (A)
2
General Description
The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are
well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts
base on half bridge topology.
Features
Block Diagram
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
Ordering Information
Part No.
TSM4N60CZ C0
TSM4N60CI C0
TSM4N60CH C5
TSM4N60CP RO
Package
TO-220
ITO-220
TO-251
TO-252
Packing
50pcs / Tube
50pcs / Tube
80pcs / Tube
2.5Kpcs / 13” Reel
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain to Source Avalanche Energy
(VDD = 50V, IAS=4A, L=27.5mH, RG=25Ω), Starting TJ = 25oC
Repetitive Avalanche Energy
(Pulse width limited by junction temperature)
VDS
VGS
ID
IDM
EAS
EAR
Peak Diode Recovery dv/dt
(ISD ≤ 4A, di/dt ≤ 200A/us, VDD ≤ BVDSS) Starting TJ=25ºC
dv/dt
Maximum Power Dissipation
@Ta = 25oC
TO-220 / TO-251 / TO-252
ITO-220
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
N-Channel MOSFET
Limit
600
±30
4
16
240
10
4.5
70
25
+150
-55 to +150
Unit
V
V
A
A
mJ
mJ
V/ns
W
oC
oC
1/9 Version: A07
1 page TSM4N60www.DataSheet4U.com
600V N-Channel Power MOSFET
TO-220 Mechanical Drawing
TO-220 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 10.000 10.500
0.394
0.413
B 3.740
3.910
0.147
0.154
C 2.440
2.940
0.096
0.116
D - 6.350 - 0.250
E 0.381
1.106
0.015
0.040
F 2.345
2.715
0.092
0.058
G 4.690
5.430
0.092
0.107
H 12.700 14.732
0.500
0.581
I 8.382 9.017 0.330 0.355
J 14.224 16.510
0.560
0.650
K 3.556
4.826
0.140
0.190
L 0.508
1.397
0.020
0.055
M 27.700 29.620
1.060
1.230
N 2.032
2.921
0.080
0.115
O 0.255
0.610
0.010
0.024
P 5.842
6.858
0.230
0.270
5/9 Version: A07
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet TSM4N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM4N60 | 600V N-Channel Power MOSFET | Taiwan Semiconductor Company |
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