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Número de pieza | TSM5N50 | |
Descripción | 500V N-Channel Power MOSFET | |
Fabricantes | Taiwan Semiconductor Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM5N50 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Pin Definition:
1. Gate
2. Drain
3. Source
TSM5N50www.DataSheet4U.com
500V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
500 1.8 @ VGS =10V
ID (A)
2.2
General Description
The TSM5N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
● Low gate charge typical @ 13nC
● Low Crss typical @ 8.5pF
● Fast Switching
● 100% avalanche tested
● Improved dv/dt capability
Block Diagram
Ordering Information
Part No.
TSM5N50CZ C0
Package
TO-220
Packing
50pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
Pulsed Drain Current
ID
IDM
Continuous Source Current (Diode Conduction)
Peak Diode Recovery (Note 2)
IS
dv/dt
Single Pulse Drain to Source Avalanche Energy (Note 3)
Maximum Power Dissipation @Ta = 25oC
Operating Junction and Storage Temperature Range
EAS
PD
TJ, TSTG
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJC
RӨJA
N-Channel MOSFET
Limit
500
±30
4.5
18
4.5
4.5
300
85
-55 to +150
Limit
1.47
62.5
Unit
V
V
A
A
A
V/ns
mJ
W
oC
Unit
oC/W
oC/W
1/6 Version: A07
1 page TSM5N50www.DataSheet4U.com
500V N-Channel Power MOSFET
TO-220 Mechanical Drawing
TO-220 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 10.000 10.500
0.394
0.413
B 3.740
3.910
0.147
0.154
C 2.440
2.940
0.096
0.116
D - 6.350 - 0.250
E 0.381
1.106
0.015
0.040
F 2.345
2.715
0.092
0.058
G 4.690
5.430
0.092
0.107
H 12.700 14.732
0.500
0.581
J 14.224 16.510
0.560
0.650
K 3.556
4.826
0.140
0.190
L 0.508
1.397
0.020
0.055
M 27.700 29.620
1.060
1.230
N 2.032
2.921
0.080
0.115
O 0.255
0.610
0.010
0.024
P 5.842
6.858
0.230
0.270
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/6 Version: A07
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TSM5N50.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM5N50 | 500V N-Channel Power MOSFET | Taiwan Semiconductor Company |
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