|
|
|
부품번호 | TSM7N60 기능 |
|
|
기능 | 600V N-Channel Power MOSFET | ||
제조업체 | Taiwan Semiconductor Company | ||
로고 | |||
ITO-220
Preliminary
TSM7N60
600V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 1.2 @ VGS =10V
ID (A)
3.5
General Description
The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Block Diagram
● Low RDS(ON) 1.2Ω (Max.)
● Low gate charge typical @ 28nC (Typ.)
● Low Crss typical @ 12pF (Typ.)
● Fast Switching
Ordering Information
Part No.
TSM7N60CZ C0
TSM7N60CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Ta = 25ºC
Ta = 100ºC
VGS
ID
Pulsed Drain Current *
Avalanche Current (Single) (Note 2)
IDM
IAS
Single Pulse Avalanche Energy (Note 2)
EAS
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Maximum Power Dissipation @Ta = 25oC
Operating Junction Temperature
IAR
EAR
PD
TJ
Storage Temperature Range
* Limited by maximum junction temperature
TSTG
N-Channel MOSFET
Limit
600
±30
7
3.2
28
7
230
7
7.5
65
150
-55 to +150
Unit
V
V
A
A
A
A
mJ
A
mJ
W
ºC
oC
1/7 Version: Preliminary
Preliminary
TSM7N60
600V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
Diode Reverse Recovery Time Test Circuit & Waveform
4/7 Version: Preliminary
4페이지 Preliminary
TSM7N60
600V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
7/7 Version: Preliminary
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ TSM7N60.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TSM7N60 | 600V N-Channel Power MOSFET | Taiwan Semiconductor Company |
TSM7N65 | 650V N-Channel Power MOSFET | Taiwan Semiconductor Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |