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PDF TSM8405P Data sheet ( Hoja de datos )

Número de pieza TSM8405P
Descripción Single P-Channel 1.8V Specified MicroSURF MOSFET
Fabricantes Taiwan Semiconductor Company 
Logotipo Taiwan Semiconductor Company Logotipo



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No Preview Available ! TSM8405P Hoja de datos, Descripción, Manual

TSM8405P
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Single P-Channel 1.8V Specified MicroSURFTM MOSFET
Patent Pending
DS DS
SD GG
Bump Side View
Lateral Power™ for
Load Switching and PA Switch
VDS = - 12V
RDS (on), Vgs @ - 4.5V, Ids @ - 4.9A = 50m
RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70m
RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90m
Description
TSM8405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless
packaging minimizes PCB space and Rds(on) plus provides an ultra low Qg x Rds(on) figure of merit.
Features
Low profile package: less than 0.8mm height when
mounted on PCB
Occupies only 2.25mm2 of PCB area
Less than 25% of the area of a SSOT-6
Excellent thermal and electrical capabilities
Lead free solder bumps available
Block Diagram
Ordering Information
Part No.
TSM8405P
Packing
Tape & Reel
Q’ty
3kpcs / 7”
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation (Steady State)
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
Parameter
Junction to Ambient Thermal Resistance
Junction to Balls Thermal Resistance
Symbol
Rθja
RθjR
Limit
- 12V
±8
- 4.9
- 10
1. 5
+150
- 55 to +150
Limit
85
12
Unit
V
V
A
A
W
oC
oC
Unit
oC/W
oC/W
TSM8405P
1-1 2003/10 rev. G

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TSM8405P pdf
Dimensional Outline and Pad Layout
DD
GS
0.80mm
Ø 0.35mm
Solder Mask Ø ~ 0.32mm
(Solder Mask Defined Pads)
0.80mm
D = Drain Pad
S = Source Pad
G = Gate Pad
0.27mm
LAND PATTERN RECOMMENDATION
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SILICON
0.757mm
+/-0.03mm
EXXXX
BACKSIDE VIEW (No Bump Side View)
Mark on backside of die
E = 8405P Product Code
XXXX = Lot Traceability Code
Mark is located in lower right quadrant
on top of Drain pad. Gate pad is located
in lower left quadrant.
1.55mm
+/- 0.05mm
1.55mm
+/-0.05mm
0.30mm
0.80mm
Bump
Ø 0.37mm
0.80mm 0.30mm
Bumps are Lead Free solder 96.8 Sn / 2.6 Ag / 0.6 Cu
Patents are pending on the product described in the data sheet.
Lateral PowerTM and MicroSURFTM are trademarks of Great Wall Semiconductor Corporation.
TSM8405P
5-5 2003/10 rev. G

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