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Número de pieza | TSM9N50 | |
Descripción | 500V N-Channel Power MOSFET | |
Fabricantes | Taiwan Semiconductor Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM9N50 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Preliminary
TSM9N50
500V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
500 0.85 @ VGS =10V
ID (A)
4.8
General Description
The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Block Diagram
● Low RDS(ON) 0.85Ω @ VGS = 10V
● Low gate charge typical @ 63nC (Typ.)
● Low Crss typical @ 120pF (Typ.)
● Fast Switching
Ordering Information
Part No.
TSM9N50CZ C0
TSM9N50CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current*
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Total Power Dissipation @Tc = 25oC
Operating Junction Temperature
Storage Temperature Range
Ta = 25ºC
Ta = 100ºC
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PDTOT
TJ
TSTG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RӨJC
RӨJA
N-Channel MOSFET
Limit
500
±30
9
5.1
36
510
8
13
125
150
-55 to +150
Limit
3.1
62.5
Unit
V
V
A
A
A
mJ
A
mJ
W
ºC
oC
Unit
oC/W
oC/W
1/7 Version: Preliminary
1 page Preliminary
TSM9N50
500V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
TO-220 Mechanical Drawing
TO-220 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 10.000 10.500
0.394
0.413
B 3.740
3.910
0.147
0.154
C 2.440
2.940
0.096
0.116
D - 6.350 - 0.250
E 0.381
1.106
0.015
0.040
F 2.345
2.715
0.092
0.058
G 4.690
5.430
0.092
0.107
H 12.700 14.732
0.500
0.581
J 14.224 16.510
0.560
0.650
K 3.556
4.826
0.140
0.190
L 0.508
1.397
0.020
0.055
M 27.700 29.620
1.060
1.230
N 2.032
2.921
0.080
0.115
O 0.255
0.610
0.010
0.024
P 5.842
6.858
0.230
0.270
5/7 Version: Preliminary
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TSM9N50.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM9N50 | 500V N-Channel Power MOSFET | Taiwan Semiconductor Company |
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