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PDF TSM6981D Data sheet ( Hoja de datos )
| Número de pieza | TSM6981D | |
| Descripción | 20V Dual P-Channel MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
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TSM6981D
20V Dual P-Chawnwwn.DealtaMSheOet4SU.cFomET
TSSOP-8
Pin Definition:
1. Drain 1
8. Drain 2
2. Source 1 7. Source 2
3. Source 1 6. Source 2
4. Gate 1
5. Gate 2
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
40 @ VGS = -4.5V
-20 50 @ VGS = -2.5V
60 @ VGS = -1.8V
ID (A)
-5
-4
-3
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
Part No.
Package
TSM6981DCA RF TSSOP-8
Packing
T&R
Dual P-Channel MOSFET
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
Ta = 25 oC
Ta = 70 oC
VDS
VGS
ID
IDM
IS
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RӨJF
RӨJA
Limit
-20
±8
-5
-30
-1.0
1.14
0.73
+150
- 55 to +150
Limit
40
75
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/6 Version: A07
1 page  
TSM6981D
20V Dual P-Chawnwwn.DealtaMSheOet4SU.cFomET
TSSOP-8 Mechanical Drawing
TSSOP-8 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 6.20
6.60
0.244
0.260
a
4.30
4.50
0.170
0.177
B 2.90
3.10
0.114
0.122
C 0.65 (typ)
0.025 (typ)
D 0.25
0.30
0.010
0.019
E 1.05
1.20
0.041
0.049
e
0.05
0.15
0.002
0.009
F 0.127
0.005
L
0.50
0.70
0.020
0.028
5/6 Version: A07
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM6981D.PDF ] | |
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