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PDF TSM9426D Data sheet ( Hoja de datos )
| Número de pieza | TSM9426D | |
| Descripción | 20V Dual N-Channel MOSFET w/ESD Protected | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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Preliminary
TSM9426D
20V Dual N-Channel MOSFET w/wEwSw.DDataPShreoett4eU.ccotmed
SOP-8
Pin Definition:
1. Source 1 8. Drain 1
2. Gate 1
7. Drain 1
3. Source 2 6. Drain 2
4. Gate 2
5. Drain 2
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
14 @ VGS = 10V
20 16 @ VGS = 4.5V
22 @ VGS = 2.5V
30 @ VGS = 1.8V
ID (A)
9.4
8
6
4
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
● ESD Protect 2KV
Application
● Specially Designed for Li-on Battery Packs
● Battery Switch Application
Ordering Information
Part No.
Package
TSM9426DCS RL SOP-8
Packing
2.5Kpcs / 13” Reel
Block Diagram
Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
Ta = 25oC
Ta = 75oC
VDS
VGS
ID
IDM
IS
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
RӨJF
RӨJA
Limit
20
±12
9.4
40
3
2
1.28
+150
-55 to +150
Limit
45
62.5
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/4 Version: Preliminary
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TSM9426D.PDF ] | |
Hoja de datos destacado
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| TSM9426D | 20V Dual N-Channel MOSFET w/ESD Protected | Taiwan Semiconductor Company |
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