(PDF) BTB1182J3 Datasheet - Low Vcesat PNP Epitaxial Planar Transistor

Número de pieza	BTB1182J3
Descripción	Low Vcesat PNP Epitaxial Planar Transistor
Fabricantes	Cystech Electonics Corp
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No Preview Available ! CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1182J3 Features • Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics • Complementary to BTD1758J3 wSpwewc..DNao.ta: SCh8e1e2tJ43U.com Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Symbol BTB1182J3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Single Pulse , Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg BTB1182J3 Limits -40 -30 -5 -2 -5 (Note) 10 150 -55~+150 Unit V V V A A W °C °C CYStek Product Specification 1 page

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PDF BTB1182J3 Data sheet ( Hoja de datos )