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부품번호 MEN9973J3 기능
기능 N-Channel Enhancement Mode Power MOSFET
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MEN9973J3 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh4e1e8Jt43U-E.com
Issued Date : 2009.02.10
Revised Date :
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MEN9973J3
BVDSS
ID
RDSON
60V
12A
100mΩ
Features
VDS=60V
RDS(ON)=80mΩ(max.)@VGS=10V, ID=9A
RDS(ON)=100mΩ(max.)@VGS=5V, ID=6A
Low Gate Charge
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
Symbol
MEN9973J3
Outline
TO-252
GGate
DDrain
SSource
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty Cycle 1%
MEN9973J3
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Limits
60
±20
12
8
30 *1
12
7.2
3.6 *2
20
0.22
-55~+175
Unit
V
V
A
A
A
A
mJ
mJ
W
W/°C
°C
CYStek Product Specification




MEN9973J3 pdf, 반도체, 판매, 대치품
CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh4e1e8Jt43U-E.com
Issued Date : 2009.02.10
Revised Date :
Page No. : 4/7
Characteristic Curves(Cont.)
10
ID = 10A
8
6
Gate Charge Characteristics
VDS = 15V
30V
4
2
0
0 2 4 6 8 10 12 14
Qg - Gate Charge( nC)
1500
1350
1200
1050
900
750
600
450
300
150
0
0
Capacitance Characteristics
Ciss
Coss
Crss
10 20
30
VDS - Drain-Source Voltage( V )
40
f = 1MHz
VGS = 0 V
50 60
Maximum Safe Operating Area
80
50
RDS(ON) Limit
10
VGS = 10V
Single Pulse
RθJC = 7.5°C/ W
1 TC = 25°C
0
01
10
VDS - Drain-Source Voltage( V )
100μs
1ms
10ms
100ms
1s
10s
DC
60
Single Pulse Maximum Power Dissipation
50
Single Pulse
RθJC= 7.5° C/ W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1 1 10
t 1,Time ( sec )
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
10 -4
10 -3
10 -2
10 -1
1
t 1 ,Time (sec)
Notes:
PDM
t1
1.Duty
Cycle,D
t2
=
t1
t2
2.RθJC=7.5° C/ W
3.TJ - TC = P* RθJC (t)
4.RθJC(t)=r(t) * RθJC
10 100
1000
MEN9973J3
CYStek Product Specification

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MEN9973J3 전자부품, 판매, 대치품
CYStech Electronics Corp.
TO-252 Dimension
wSpwewc..DNao.ta: SCh4e1e8Jt43U-E.com
Issued Date : 2009.02.10
Revised Date :
Page No. : 7/7
A C Marking:
B
L
F
D
G
Device Name
Date code
9973
□□□□
EK
3
H
2
I
1
J
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
DIM
Inches
Min. Max.
A 0.0177 0.0217
B 0.0650 0.0768
C 0.0354 0.0591
D 0.0177 0.0236
E 0.2441 0.2677
F 0.2125 0.2283
Millimeters
Min. Max.
0.45 0.55
1.65 1.95
0.90 1.50
0.45 0.60
6.20 6.80
5.40 5.80
*: Typical
DIM
Inches
Min. Max.
Millimeters
Min. Max.
G 0.0866 0.1102 2.20 2.80
H
- *0.0906 -
*2.30
I
- 0.0449 -
1.14
J
- 0.0346 -
0.88
K 0.2047 0.2165 5.20 5.50
L 0.0551 0.0630 1.40 1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead : KFC; pure tin plated
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MEN9973J3
CYStek Product Specification

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