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부품번호 | MTB06N03J3 기능 |
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기능 | N-Channel Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh4e4e1Jt43U.com
Issued Date : 2009.03.02
Revised Date :
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTB06N03J3
BVDSS
ID
RDS(ON)
30V
80A
6mΩ
Features
• 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
MTB06N03J3
Outline
TO-252
G:Gate
D:Drain
S:Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
Total Power Dissipation @ TC=25℃
Total Power Dissipation @ TC=100℃
Operating Junction and Storage Temperature Range
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTB06N03J3
Limits
30
±20
80
50
170
53
140
40
83
45
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
wSpwewc..DNao.ta: SCh4e4e1Jt43U.com
Issued Date : 2009.03.02
Revised Date :
Page No. : 4/7
MTB06N03J3
CYStek Product Specification
4페이지 CYStech Electronics Corp.
TO-252 Dimension
wSpwewc..DNao.ta: SCh4e4e1Jt43U.com
Issued Date : 2009.03.02
Revised Date :
Page No. : 7/7
A C Marking:
B
L
F
D
G
EK
3
H
2
I
1
J
Device Name
Date code
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
DIM
Inches
Min. Max.
A 0.0177 0.0217
B 0.0650 0.0768
C 0.0354 0.0591
D 0.0177 0.0236
E 0.2441 0.2677
F 0.2125 0.2283
Millimeters
Min. Max.
0.45 0.55
1.65 1.95
0.90 1.50
0.45 0.60
6.20 6.80
5.40 5.80
*: Typical
DIM
Inches
Min. Max.
Millimeters
Min. Max.
G 0.0866 0.1102 2.20 2.80
H
- *0.0906 -
*2.30
I
- 0.0449 -
1.14
J
- 0.0346 -
0.88
K 0.2047 0.2165 5.20 5.50
L 0.0551 0.0630 1.40 1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : KFC; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB06N03J3
CYStek Product Specification
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ MTB06N03J3.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
MTB06N03J3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
MTB06N03J3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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