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부품번호 | MEN9971J3 기능 |
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기능 | N-Channel Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh4e3e2Jt43U.com
Issued Date : 2008.12.09
Revised Date : 2009.02.04
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MEN9971J3
BVDSS
ID
60V
25A
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
RDSON(MAX)
20mΩ
Symbol
MEN9971J3
Outline
TO-252
G:Gate
D:Drain
S:Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=20A,RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MEN9971J3
Limits
60
±20
25
16
100 *1
20
20
10
50
0.31
-55~+175
Unit
V
A
mJ
W
W/°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
wSpwewc..DNao.ta: SCh4e3e2Jt43U.com
Issued Date : 2008.12.09
Revised Date : 2009.02.04
Page No. : 4/8
MEN9971J3
CYStek Product Specification
4페이지 CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh4e3e2Jt43U.com
Issued Date : 2008.12.09
Revised Date : 2009.02.04
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
100°C
150°C
−Temperature Max(TS max)
−Time(ts min to ts max)
150°C
60-120 seconds
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MEN9971J3
CYStek Product Specification
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ MEN9971J3.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MEN9971J3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
MEN9971J3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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