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Número de pieza | MTB06N03J3 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB06N03J3 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh4e4e1Jt43U.com
Issued Date : 2009.03.02
Revised Date :
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTB06N03J3
BVDSS
ID
RDS(ON)
30V
80A
6mΩ
Features
• 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
MTB06N03J3
Outline
TO-252
G:Gate
D:Drain
S:Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
Total Power Dissipation @ TC=25℃
Total Power Dissipation @ TC=100℃
Operating Junction and Storage Temperature Range
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTB06N03J3
Limits
30
±20
80
50
170
53
140
40
83
45
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification
1 page Reel Dimension
CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh4e4e1Jt43U.com
Issued Date : 2009.03.02
Revised Date :
Page No. : 5/7
Carrier Tape Dimension
MTB06N03J3
CYStek Product Specification
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet MTB06N03J3.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB06N03J3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
MTB06N03J3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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