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PDF ACE7400 Data sheet ( Hoja de datos )

Número de pieza ACE7400
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes ACE Technology 
Logotipo ACE Technology Logotipo



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No Preview Available ! ACE7400 Hoja de datos, Descripción, Manual

 
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ACE7400                                                                                                                                                                           
                                              Technology N-Channel Enhancement Mode MOSFET
Description
The ACE7400 is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss are needed in
a very small outline surface mount package.
Features
30V/2.8A, RDS(ON)=77mΩ@VGS=10V
30V/2.3A, RDS(ON)=85mΩ@VGS=4.5V
30V/1.5A, RDS(ON)=110mΩ@VGS=2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150)
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
30 V
±12 V
2.8
2.1
A
10 A
1.25 A
0.33
0.21
W
150 OC
-55/150 OC
100 OC/W
VER 1.2 1 

1 page




ACE7400 pdf
 
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ACE7400                                                                                                                                                                           
                                              Technology N-Channel Enhancement Mode MOSFET
Threshold Voltage
Single Pulse Power
TJ-Temperature()
Time (sec)
Normalized Thermal Transient Impedance, Junction-to Foot
Square Wave Pulse Duration (sec)
VER 1.2 5

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