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PDF ACE2303 Data sheet ( Hoja de datos )
| Número de pieza | ACE2303 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ACE2303 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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ACE2303www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Description
The ACE2303 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
• -30V/-2.6A, RDS(ON)=130mΩ@VGS=-10V
• -30V/-2.0A, RDS(ON)=180mΩ@VGS=-4.5V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
• SOT-23-3L package design
Application
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS -30 V
Gate-Source Voltage
VGSS ±20 V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=70℃
ID
-3.0 A
-2.0
Pulsed Drain Current
IDM -10 A
Continuous Source Current (Diode Conduction) IS -1.25 A
Power Dissipation
TA=25℃
TA=70℃
PD
1.25 W
0.8
Operating Junction Temperature
TJ 150 ℃
Storage Temperature Range
TSTG -55/150 ℃
Thermal Resistance-Junction to Ambient
RθJA 100 ℃/W
VER 1.2 1
1 page  
ACE2303www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Typical Characteristics
Gate Charge
On-Resistance vs. Junction Temperature
Oq Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ – Junction Temperature (℃)
On-Resistance vs. Gate-to-Source Voltage
VSD Source to Drain Voltage (V)
VGS – Gate to Source Voltage (V)
VER 1.2 5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ACE2303.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ACE2301 | P-Channel Enhancement Mode MOSFET | ACE Technology |
| ACE2302 | N-Channel Enhancement Mode MOSFET | ACE Technology |
| ACE2302M | N-Channel MOSFET | ACE Technology |
| ACE2303 | P-Channel Enhancement Mode MOSFET | ACE Technology |
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