FDS5672 Datasheet PDF - Fairchild Semiconductor
| Part Number | FDS5672 | |
| Description | N-Channel PowerTrench MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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July 2005
FDS5672
N-Channel PowerTrench® MOSFET
60V, 12A, 10mΩ
Features
rDS(ON) = 10mΩ, VGS = 10V, ID = 12A
rDS(ON) = 14mΩ, VGS = 6V, ID = 10A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
DC/DC converters
Branding Dash
1
2
3
4
SO-8
5
54
63
72
81
©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
1
www.fairchildsemi.com
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Typical Characteristics TC = 25°C unless otherwise noted
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400
100µs
100
1ms
10
OPERATION IN THIS
AREA MAY BE
1 LIMITED BY rDS(ON)
10ms
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
0.1
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
70
Figure 5. Forward Bias Safe Operating Area
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.1
1 10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20 VDD = 15V
15
TJ = 150oC
10
TJ = 25oC
5
TJ = -55oC
0
3.0
3.5 4.0 4.5 5.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
5.5
25
VGS = 6V
VGS = 5V
20
15
VGS = 10V
VGS = 4.5V
10
5
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TA = 25oC
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 8. Saturation Characteristics
15.0
12.5
VGS = 6V
10.0
VGS = 10V
7.5
5.0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
369
ID, DRAIN CURRENT (A)
12
Figure 9. Drain to Source On Resistance vs Drain
Current
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
-80
VGS = 10V, ID = 12A
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
5
www.fairchildsemi.com
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| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FDS5672.PDF Datasheet ] | |
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