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부품번호 | STD11NM60ND 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 19 페이지수
STD11NM60ND, STF/I11NM60ND
STP11NM60ND, STU11NM60ND
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET
I2PAK, TO-220, TO-220FP, IPAK, DPAK
Features
Order codes VDSS (@Tjmax) RDS(on) max ID
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
650 V
< 0.45 Ω
10 A
10 A(1)
10 A
10 A
10 A
1. Limited only by maximum temperature allowed
■ The worldwide best RDS(on)* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
11NM60ND
3
1
DPAK
3
2
1
TO-220
IPAK
3
2
1
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
DPAK
TO-220FP
I2PAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
Tube
October 2010
Doc ID 14625 Rev 2
1/19
www.st.com
19
Electrical ratings
Table 4. Avalanche characteristics
Symbol
Parameter
IAS Avalanche current, repetitive or not-repetitive(1)
EAS Single pulse avalanche energy (2)
1. Pulse width limited by Tj max
2. starting Tj= 25 °C, ID=IAS, VDD= 50 V
STD/F/I/P/U11NM60ND
Max value
3.5
200
Unit
A
mJ
4/19 Doc ID 14625 Rev 2
4페이지 STD/F/I/P/U11NM60ND
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2.
)$
!
Safe operating area for TO-220,
I²PAK
Figure 3.
!-V
Thermal impedance for TO-220,
I²PAK
S
S
4J #
4C #
3INGLE
PULSE
MS
MS
6$36
Figure 4.
ID
(A)
Safe operating area for TO-220FP Figure 5.
AM08612v1
Thermal impedance for TO-220FP
10
10µs
1
0.1
0.01
0.1
1
100µs
Tj=150°C
Tc=25°C
Single
pulse
1ms
10ms
10 100 VDS(V)
Figure 6.
ID
(A)
Safe operating area for DPAK, IPAK Figure 7.
AM08613v1
Thermal impedance for DPAK, IPAK
10
1
0.1
0.1
1
10µs
100µs
Tj=150°C
Tc=25°C
Single
pulse
1ms
10ms
10 100 VDS(V)
Doc ID 14625 Rev 2
7/19
7페이지 | |||
구 성 | 총 19 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
STD11NM60N | N-channel Second generation MDmesh Power MOSFET | ST Microelectronics |
STD11NM60N-1 | N-channel Second generation MDmesh Power MOSFET | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |