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STD18NF03L PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STD18NF03L
기능 Power MOSFET
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STD18NF03L 데이터시트, 핀배열, 회로
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STD18NF03L
N-channel 30V - 0.038- 17A - DPAK
STripFET™ II Power MOSFET
Features
Type
STD18NF03L
VDSS
30V
RDS(on)
<0.05
Exceptional dv/dt capability
Low gate charge at 100°C
Application oriented characterization
100% avalanche tested
ID
17A
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Application
Switching applications
– Automotive
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STD18NF03L
Marking
D18NF03L
Package
DPAK
Packaging
Tape & reel
July 2007
Rev 1
1/13
www.st.com
13




STD18NF03L pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
www.SDTatDa1Sh8eNeFt40U3.cLom
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
30
V
VDS = Max rating
VDS = Max rating,
TC = 125°C
1 µA
10 µA
VGS = ± 16V
±100 nA
VDS = VGS, ID = 250µA
1
1.5 2.2
V
VGS = 10V, ID = 8.5A
VGS = 5V, ID = 8.5A
0.038 0.05
0.045 0.06
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS > ID(on) x
RDS(on)max, , ID =8.5A
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15V, ID = 8.5A
RG = 4.7VGS = 5V
(see Figure 14)
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 3024V, ID = 17A,
VGS = 5V, RG = 4.7
(see Figure 15)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min.
Typ.
12
320
155
28
11
100
25
22
4.8
2.25
1.7
Max.
6.5
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
4/13

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STD18NF03L 전자부품, 판매, 대치품
STD18NF03L
Electricwawl cwh.DaaratacStheereist4tUic.csom
Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs.
vs. temperature
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized breakdown voltage vs.
temperature
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링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
STD18NF03L

Power MOSFET

STMicroelectronics
STMicroelectronics

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