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PDF MRFG35002N6AT1 Data sheet ( Hoja de datos )
| Número de pieza | MRFG35002N6AT1 | |
| Descripción | Gallium Arsenide PHEMT RF Power Field Effect Transistor | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• 3T6.5y8p4micAMa,lHSPzio,nuPgt [email protected], %3P5eP5r0rfooMbrmaHbazinl,itcCyeh:oanVnDCnDeCl=DB6Fa.nVdowltsid, tIhDQ= =
Power Gain — 10 dB
Drain Efficiency — 26.5%
ACPR @ 5 MHz Offset — - 42 dBc in 3.84 MHz Channel Bandwidth
• 1.5 Watts P1dB @ 3550 MHz, CW
Features
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MRFG35002N6A
Rev. 1, 12/2008
www.DataSheet4U.com
MRFG35002N6AT1
3.5 GHz, 1.5 W, 6 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature (1)
Table 2. Thermal Characteristics
VDSS
VGS
Pin
Tstg
Tch
8
-5
22
- 65 to +150
175
Characteristic
Symbol
Value (2)
Thermal Resistance, Junction to Case
RθJC
13.7
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
dBm
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35002N6AT1
1
1 page  
TYPICAL CHARACTERISTICS
14
VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz
12 Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
10
Gps
8
60
50
40
30
6
ηD
4
20
10
20
14 16 18 20 22 24 26 28
Pout, OUTPUT POWER (dBm)
Figure 3. Single - Channel W - CDMA Power Gain
and Drain Efficiency versus Output Power
0
VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel
−10 Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
0
−5
−20
IRL
−30
−10
−15
−40 −20
ACPR
−50 −25
14 16 18 20 22 24 26 28
Pout, OUTPUT POWER (dBm)
Figure 4. Single - Channel W - CDMA Adjacent
Channel Power Ratio and IRL versus Output Power
14
VDD = 6 Vdc, IDQ = 65 mA, Pout = 158 mW
12 Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
10 Gps
8
36
34
32
30
6
ηD
4
28
26
2 24
3450 3500 3550 3600 3650
f, FREQUENCY (MHz)
Figure 5. Single - Channel W - CDMA Power Gain
and Drain Efficiency versus Frequency
NOTE: Data is generated from the test circuit shown.
RF Device Data
Freescale Semiconductor
www.DataSheet4U.com
MRFG35002N6AT1
5
5 Page 
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How to Reach Us:
Home Page:
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© Freescale Semiconductor, Inc. 2007, 2008. All rights reserved.
RDFocDumevenict eNuDmabetar: MRFG35002N6A
FRreeve. s1,c1a2l/e200S8emiconductor
MRFG35002N6AT1
11
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