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Número de pieza | 55GN01C | |
Descripción | UHF Wide-band Low-noise Amplifier Applications | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 55GN01C (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Ordering number : ENN7769
55GN01C
www.DataSheet4U.com
55GN01C
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise Amplifier
Applications
Features
• High cutoff frequency : fT= 5.5GHz typ.
• High gain
: S21e2=9.5dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Marking : ZW
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
S21e2
NF
Conditions
VCB=10V, IE=0
VEB=2V, IC=0
VCE=5V, IC=10mA
VCE=3V, IC=5mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=3V, IC=5mA, f=1GHz, ZS=ZL=50Ω
Ratings
20
10
3
70
200
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Ratings
min typ
100
3.0 4.5
5.5
1.1
0.7
6.5 9.5
1.9
max
0.1
1
180
1.3
Unit
µA
µA
GHz
GHz
pF
pF
dB
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71504 TS IM TA-101028 No.7769-1/6
1 page S Parameters (Common emitter)
VCE=5V, IC=15mA, ZO=50Ω
Freq(MHz)
S11
100 0.511
∠S11
--75.82
200
0.379
--111.32
400
0.315
--144.06
600
0.302
--158.98
800
0.301
--168.64
1000
0.307
--176.32
1200
0.314
177.94
1400
0.322
172.88
1600
0.329
167.84
1800
0.337
163.07
2000
0.348
159.32
55GN01C
S21
20.333
12.202
6.538
4.489
3.455
2.857
2.433
2.153
1.961
1.792
1.676
∠S21
125.66
106.68
90.52
81.46
74.33
67.93
62.00
57.01
51.67
46.79
42.28
S12
0.034
0.051
0.084
0.118
0.153
0.186
0.217
0.256
0.286
0.308
0.355
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
S11
100 0.461
200 0.346
400 0.299
600 0.293
800 0.295
1000
0.299
1200
0.307
1400
0.316
1600
0.325
1800
0.333
2000
0.343
∠S11
--82.96
--118.63
--149.09
--162.67
--171.32
--178.25
176.25
172.08
166.77
162.69
158.91
S21
21.657
12.582
6.669
4.554
3.503
2.900
2.468
2.178
1.988
1.813
1.692
∠S21
121.91
104.09
89.15
80.67
73.57
67.59
61.65
56.76
51.53
46.81
42.30
S12
0.031
0.049
0.084
0.118
0.153
0.187
0.221
0.260
0.290
0.310
0.357
VCE=5V, IC=30mA, ZO=50Ω
Freq(MHz)
S11
100 0.399
200 0.317
400 0.289
600 0.288
800 0.293
1000
0.298
1200
0.306
1400
0.318
1600
0.327
1800
0.336
2000
0.347
∠S11
--93.89
--127.93
--154.90
--166.40
--174.03
179.55
174.88
170.70
165.85
161.66
158.15
S21
22.859
12.830
6.712
4.587
3.524
2.904
2.478
2.188
1.992
1.815
1.699
∠S21
117.43
101.25
87.64
79.56
72.71
66.80
61.04
56.20
50.94
46.08
41.95
S12
0.029
0.045
0.082
0.119
0.155
0.190
0.223
0.261
0.292
0.313
0.358
VCE=5V, IC=50mA, ZO=50Ω
Freq(MHz)
S11
100 0.362
200 0.317
400 0.307
600 0.310
800 0.316
1000
0.324
1200
0.333
1400
0.345
1600
0.354
1800
0.363
2000
0.376
∠S11
--108.51
--140.52
--162.72
--172.48
--178.74
175.82
171.21
167.33
162.55
158.67
155.01
S21
22.521
12.288
6.363
4.352
3.340
2.762
2.353
2.077
1.888
1.725
1.615
∠S21
112.91
98.38
85.74
77.92
71.23
65.12
59.35
54.36
49.16
44.33
39.70
S12
0.026
0.044
0.080
0.119
0.153
0.189
0.220
0.260
0.289
0.313
0.361
∠S12
62.58
63.43
68.22
69.82
69.70
68.77
68.37
66.71
62.74
61.86
61.87
∠S12
64.47
64.74
70.72
71.64
70.77
69.56
68.70
66.77
62.70
62.12
61.46
∠S12
65.09
68.93
71.95
72.93
72.01
70.26
69.29
66.98
63.01
62.10
61.22
∠S12
65.35
72.35
73.69
74.51
72.84
71.55
70.16
68.28
63.88
63.21
62.47
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S22
0.649
0.445
0.326
0.299
0.290
0.296
0.302
0.311
0.325
0.337
0.359
∠S22
--37.05
--45.58
--47.13
--49.32
--54.83
--60.27
--65.94
--71.94
--79.69
--84.37
--88.78
S22
0.600
0.406
0.302
0.283
0.275
0.282
0.290
0.300
0.316
0.325
0.347
∠S22
--39.22
--46.06
--46.24
--49.39
--54.70
--60.94
--66.45
--72.89
--80.43
--85.59
--89.65
S22
0.537
0.364
0.281
0.266
0.262
0.269
0.279
0.289
0.305
0.318
0.337
∠S22
--40.85
--45.35
--44.97
--48.17
--54.35
--60.45
--66.19
--73.12
--80.46
--85.63
--90.00
S22
0.481
0.338
0.278
0.271
0.270
0.280
0.289
0.300
0.317
0.330
0.352
∠S22
--39.63
--40.74
--40.44
--44.11
--50.45
--57.21
--63.53
--70.35
--78.50
--83.35
--88.07
No.7769-5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 55GN01C.PDF ] |
Número de pieza | Descripción | Fabricantes |
55GN01C | UHF Wide-band Low-noise Amplifier Applications | Sanyo Semicon Device |
55GN01CA | NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications | Sanyo Semicon Device |
55GN01CA | RF Transistor | ON Semiconductor |
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