|
|
Número de pieza | 55GN01S | |
Descripción | UHF Wide-band Low-noise Amplifier Applications | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 55GN01S (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Ordering number : ENN7687
55GN01S
www.DataSheet4U.com
55GN01S
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise Amplifier
Applications
Features
• High cutoff frequency : fT= 5.5GHz typ.
• High gain : S21e2=10dB typ (f=1GHz).
• Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Marking : ZD
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
S21e2
NF
Conditions
VCB=10V, IE=0
VEB=2V, IC=0
VCE=5V, IC=10mA
VCE=3V, IC=5mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=3V, IC=5mA, f=1GHz, ZS=ZL=50Ω
Ratings
20
10
3
70
100
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Ratings
min typ
100
3.0 4.5
5.5
1.0
0.6
7 10
1.9
max
0.1
1
180
1.2
Unit
µA
µA
GHz
GHz
pF
pF
dB
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52004 TS IM TA-100819 No.7687-1/6
1 page S Parameters (Common emitter)
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
S11
∠S11
100
0.570
--89.86
200
0.520
--126.23
400
0.503
--153.83
600
0.506
--164.64
800
0.504
--172.52
1000
0.498
--177.66
1200
0.496
177.98
1400
0.492
173.75
1600
0.488
170.09
1800
0.481
166.42
2000
0.481
162.19
2200
0.472
158.01
2400
0.472
154.06
2600
0.467
149.87
2800
0.467
145.82
3000
0.462
142.08
VCE=5V, IC=30mA, ZO=50Ω
Freq(MHz)
S11
100 0.523
200 0.498
400 0.498
600 0.503
800 0.500
1000
0.499
1200
0.498
1400
0.494
1600
0.489
1800
0.484
2000
0.483
2200
0.476
2400
0.476
2600
0.471
2800
0.471
3000
0.467
∠S11
--103.16
--136.49
--159.57
--168.52
--175.28
--179.85
176.25
172.08
169.05
165.09
161.02
157.15
153.18
149.16
145.15
141.40
55GN01S
S21
25.811
15.701
8.426
5.772
4.408
3.555
3.013
2.611
2.319
2.096
1.917
1.760
1.633
1.523
1.434
1.354
∠S21
127.74
108.51
92.69
83.96
76.83
70.62
65.15
59.99
55.01
50.36
45.65
41.21
37.24
33.18
29.86
26.43
S12
0.027
0.038
0.057
0.077
0.098
0.116
0.139
0.158
0.179
0.200
0.221
0.240
0.260
0.280
0.304
0.326
S21
27.751
16.132
8.503
5.802
4.429
3.582
3.013
2.615
2.324
2.102
1.925
1.762
1.634
1.524
1.436
1.355
∠S21
122.53
104.97
90.63
82.53
75.68
69.78
64.35
59.21
54.35
49.78
45.03
40.66
36.62
32.74
29.38
25.99
S12
0.024
0.035
0.054
0.076
0.097
0.118
0.138
0.161
0.180
0.200
0.222
0.243
0.263
0.283
0.307
0.329
∠S12
57.86
55.16
59.71
63.42
64.34
64.27
64.39
63.46
63.02
61.78
60.80
59.60
57.83
56.85
55.35
53.94
∠S12
59.02
57.80
63.85
67.20
66.04
66.40
66.22
65.47
64.05
62.79
61.56
60.04
58.71
57.48
55.99
54.46
www.DataSheet4U.com
S22
0.639
0.416
0.276
0.242
0.234
0.228
0.235
0.246
0.252
0.262
0.268
0.283
0.293
0.300
0.311
0.318
∠S22
--42.89
--54.85
--59.96
--62.99
--67.02
--70.93
--74.09
--78.62
--81.39
--85.56
--87.90
--91.47
--94.81
--98.53
--102.06
--104.23
S22
0.569
0.361
0.244
0.219
0.215
0.215
0.222
0.233
0.241
0.250
0.258
0.273
0.286
0.294
0.302
0.312
∠S22
--46.47
--56.04
--59.31
--62.34
--66.55
--70.37
--73.72
--78.23
--81.44
--85.19
--87.77
--90.81
--94.60
--98.35
--101.47
--103.95
No.7687-5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 55GN01S.PDF ] |
Número de pieza | Descripción | Fabricantes |
55GN01C | UHF Wide-band Low-noise Amplifier Applications | Sanyo Semicon Device |
55GN01CA | NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications | Sanyo Semicon Device |
55GN01CA | RF Transistor | ON Semiconductor |
55GN01FA | UHF Wide-band Low-noise Amplifier Applications | Sanyo Semicon Device |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |