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PDF BUK9213-30A Data sheet ( Hoja de datos )
| Número de pieza | BUK9213-30A | |
| Descripción | TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK9213-30A
TrenchMOS™ logic level FET
Rev. 01 — 29 July 2002
M3D300
www.DataSheet4U.com
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9213-30A in SOT428 (D-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Logic level compatible.
3. Applications
s Automotive and general purpose power switching:
x 12 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
connected to
drain (d)
2
13
Top view
MBK091
SOT428 (D-PAK)
Symbol
d
g
MBB076
s
1 page  
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±10 V; VDS = 0 V
VGS = 5 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
VGS = 4.5 V; ID = 25 A;
VGS = 10 V; ID = 25 A;
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 5 V; VDD = 24 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 20 V; RL = 2.7 Ω;
VGS = 5 V; RG = 10 Ω;
measured from drain to
centre of die
Ls internal source inductance measured from source lead
to source bond pad
BUK9213-30A
TrenchMwOwSw™.DalotagSihceelet4vUe.lcoFmET
Min Typ Max Unit
30 - - V
27 - - V
1 1.5 2 V
0.5 - - V
- - 2.3 V
-
0.05 10
µA
- - 500 µA
- 2 100 nA
- 11 13 mΩ
- - 24 mΩ
- - 14.4 mΩ
- 9 11 mΩ
- 37 - nC
- 7 - nC
- 18 - nC
-
2140
2852
pF
- 550 660 pF
- 334 457 pF
- 26 - ns
- 202 - ns
- 134 - ns
- 158 - ns
- 2.5 - nH
- 7.5 - nH
9397 750 09965
Product data
Rev. 01 — 29 July 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5 of 13
5 Page 
Philips Semiconductors
10. Revision history
Table 6: Revision history
Rev Date
CPCN
01 20020729 -
Description
Product data, initial version.
BUK9213-30A
TrenchMwOwSw™.DalotagSihceelet4vUe.lcoFmET
9397 750 09965
Product data
Rev. 01 — 29 July 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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