|
|
Número de pieza | K1S1616BCA | |
Descripción | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
Fabricantes | Samsung semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K1S1616BCA (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! K1S1616BCA
Document Title
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
Preliminary
UtRAMwww.DataSheet4U.com
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
Remark
December 12, 2003 Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 0.0
December 2003
1 page K1S1616BCA
Preliminary
UtRAMwww.DataSheet4U.com
PRODUCT LIST
Part Name
K1S1616BCA-FI70
K1S1616BCA-FI85
K1S1616BCA-BI701)
K1S1616BCA-BI851)
1. Lead Free Product
Industrial Temperature Product(-40~85°C)
Function
48-FBGA-6.00x7.00, 70ns
48-FBGA-6.00x7.00, 85ns
48-FBGA-6.00x7.00, 70ns
48-FBGA-6.00x7.00, 85ns
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1)(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Symbol
Vcc
Vss
VIH
VIL
Min
1.7
0
1.4
-0.23)
Test Condition
VIN=0V
VIO=0V
Typ
1.8/2.0
0
-
-
Max
2.1
0
Vcc+0.32)
0.4
Unit
V
V
V
V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ1) Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1 - 1 µA
Output leakage current
ILO CS=VIH, ZZ=VIH, OE=VIH or WE=VIL, VIO=Vss to Vcc
-1 - 1 µA
ICC1 Cycle time=1µs, 100% duty, IIO=0mA, CS≤0.2V,
Average operating current
ZZ≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
ICC2 Cycle time=tRC+3tPC, IIO=0mA, 100% duty, CS=VIL, ZZ=VIH,
VIN=VIL or VIH
-
-
- 5 mA
30 mA
Output low voltage
VOL IOL=0.1mA
- - 0.2 V
Output high voltage
VOH IOH=-0.1mA
Standby Current(CMOS) ISB12) CS≥Vcc-0.2V, ZZ≥Vcc-0.2V, Other inputs=Vss to Vcc
1. Typical values are tested at VCC=1.8V, TA=25°C and not guaranteed.
1.4 - - V
- - 80 µA
- 5 - Revision 0.0
December 2003
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet K1S1616BCA.PDF ] |
Número de pieza | Descripción | Fabricantes |
K1S1616BCA | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory | Samsung semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |