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부품번호 | PH3120L 기능 |
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기능 | N-channel TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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PH3120L
www.DataSheet4U.com
N-channel TrenchMOS™ logic level FET
Rev. 02 — 20 January 2005
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS™ technology.
1.2 Features
s Low thermal resistance
s Logic level gate drive
s SO8 equivalent area footprint
s Very low on-state resistance
1.3 Applications
s DC-to-DC converters
s Portable appliances
s Switched-mode power supplies
s Notebook computers
1.4 Quick reference data
s VDS ≤ 20 V
s Ptot ≤ 62.5 W
s ID ≤ 100 A
s RDSon ≤ 2.65 mΩ
2. Pinning information
Table 1:
Pin
1, 2, 3
4
mb
Pinning
Description
source
gate
mounting base; connected to drain
Simplified outline
mb
Symbol
D
G
mbb076 S
1234
Top view
SOT669 (LFPAK)
Philips Semiconductors
PH3120Lwww.DataSheet4U.com
N-channel TrenchMOS™ logic level FET
5. Thermal characteristics
Table 4:
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to mounting base Figure 4
5.1 Transient thermal impedance
10
Zth(j-mb)
(K/W)
Min Typ Max Unit
- - 2 K/W
003aaa361
δ = 0.5
1
0.2 P δ = tp
0.1 T
0.05
0.02
single pulse
tp t
T
10-1
10-5
10-4
10-3
10-2
10-1 1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
9397 750 14089
Product data sheet
Rev. 02 — 20 January 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4 of 12
4페이지 Philips Semiconductors
PH3120Lwww.DataSheet4U.com
N-channel TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2
1.5
1
03aa33
max
typ
min
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min typ max
0.5 10-5
0
-60 0 60 120 180
Tj (°C)
10-6
0123
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
104
C
(pF)
003aaa365
Ciss
103 Coss
Crss
102
10-1
1
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
9397 750 14089
Product data sheet
Rev. 02 — 20 January 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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