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PDF ARF465B Data sheet ( Hoja de datos )
| Número de pieza | ARF465B | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFETs | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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D
G
S TO-247
ARF465A
ARF465Bwww.DataSheet4U.com
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
300V 150W 60MHz
The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
• Specified 300 Volt, 40.68 MHz Characteristics:
• Output Power = 150 Watts.
• Gain = 13dB (Class C)
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
• Efficiency = 75%
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol Parameter
VDSS
VDGO
ID
VGS
PD
RθJC
TJ,TSTG
TL
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
ARF465A/B
UNIT
1200
1200
Volts
6 Amps
±30 Volts
250 Watts
0.50
°C/W
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
1200
VDS(ON) On State Drain Voltage 1 (ID(ON) = 3A, VGS = 10V)
7
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
25
250
IGSS
gfs
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 3A)
±100
34
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA)
35
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
mhos
Volts
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet ARF465B.PDF ] | |
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