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DIM300XCM45-F000 데이터시트 PDF




Dynex Semiconductor에서 제조한 전자 부품 DIM300XCM45-F000은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 DIM300XCM45-F000 자료 제공

부품번호 DIM300XCM45-F000 기능
기능 IGBT Chopper Module
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DIM300XCM45-F000 데이터시트, 핀배열, 회로
DIM300XwCwwM.Da4taS5he-eFt4U0.c0om0
FEATURES
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
High Thermal Cycling Capability
10µs Short Circuit Withstand
Lead Free construction
10.2kV isolation
IGBT Chopper Module
DS5918- 1.3 February 2009(LN26586)
KEY PARAMETERS
V CES
V CE(sat) *
(typ)
I C (max)
I C(PK)
(max)
*(measured at the auxiliary terminals)
4500V
2.9V
300A
600A
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V
to 6500V and currents up to 3600A.
The DIM300XCM45-F000 is a 4500V, soft punch
through n-channel enhancement mode, insulated
gate bipolar transistor (IGBT) chopper module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus 10us short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM300XCM45-F000
Note: When ordering, please use the complete part
number
Fig. 1 Circuit configuration
Outline type code: X
(See Fig. 11 for further information)
Fig. 2 Package
1/8ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ




DIM300XCM45-F000 pdf, 반도체, 판매, 대치품
DIM300XCM45-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
Turn-off delay time
Fall time
Turn-off energy loss
td(on) Turn-on delay time
tr Rise time
EON Turn-on energy loss
Qg Gate charge
Qrr Diode reverse recovery charge
Irr Diode reverse recovery current
Erec Diode reverse recovery energy
www.DataSheet4U.com
Test Conditions
IC = 300A
VGE = ±15V
VCE = 2250V
RG(ON) = 10
RG(OFF)= 22
Cge = 55nF
L ~ 200nH
IF =300A
VCE =2250V
dIF/dt =1500A/us
Min Typ. Max Units
5.0 s
250 ns
750 mJ
850 ns
220 ns
900 mJ
10 C
240 C
350 A
300 mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off) Turn-off delay time
tf Fall time
EOFF Turn-off energy loss
td(on) Turn-on delay time
tr Rise time
EON Turn-on energy loss
Qrr Diode reverse recovery charge
Irr Diode reverse recovery current
Erec Diode reverse recovery energy
Test Conditions
IC = 300A
VGE = ±15V
VCE = 2250V
RG(ON) = 10 , RG(OFF) = 22
Cge = 55nF
L ~ 200nH
IF =300A
VCE =2250V
dIF/dt =1500A/us
Min Typ. Max Units
5.2 s
250 ns
850 mJ
800 ns
220 ns
1350
mJ
430 C
410 A
530 mJ
4/8: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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DIM300XCM45-F000 전자부품, 판매, 대치품
DIM300XCM45-F000
www.DataSheet4U.com
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in
mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1100g
Module outline type code: X
Fig.11 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

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관련 데이터시트

부품번호상세설명 및 기능제조사
DIM300XCM45-F000

IGBT Chopper Module

Dynex Semiconductor
Dynex Semiconductor

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