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NESG2107M33 데이터시트 PDF




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NESG2107M33 데이터시트, 핀배열, 회로
PRELIMINARY DATA SHEET
www.DataSheet4U.com
NEC's NPN SILICON TRANSISTOR NESG2107M33
FEATURES
IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION
APPLICATIONS
HIGH BREAKDOWN VOLTAGE TECHNOLOGY
FOR SIGE TRANSISTORS
3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER
NESG2107M33-A
NESG2107M33-T3-A
QUANTITY
50 pcs (Non reel)
10 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
RATINGS
13.0
5.0
1.5
100
130
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
UNIT
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories




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Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Lead (Pb)
Mercury
Cadmium
Hexavalent Chromium
PBB
PBDE
Concentration Limit per RoHS
(values are not yet fixed)
< 1000 PPM
< 1000 PPM
< 100 PPM
< 1000 PPM
< 1000 PPM
< 1000 PPM
Concentration contained
in CEL devices
-A
Not Detected
-AZ
(*)
Not Detected
Not Detected
Not Detected
Not Detected
Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.

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NESG2107M33

NECs NPN SILICON TRANSISTOR

California Eastern Labs
California Eastern Labs

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