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PDF NESG210833 Data sheet ( Hoja de datos )
| Número de pieza | NESG210833 | |
| Descripción | NPN SiGe RF TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
www.DataSheet4U.com
NPN SILICON GERMANIUM RF TRANSISTOR
NESG210833
NPN SiGe RF TRANSISTOR FOR
UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION
3-PIN MINIMOLD (33 PKG)
FEATURES
• The device is an ideal choice for low noise, low distortion amplification.
NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz
NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz
• PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz
• OIP3 = 31 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz
• Maximum stable power gain: MSG =16.0 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz
• SiGe HBT technology (UHS2) : fT = 15.5 GHz
• 3-pin minimold (33 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
NESG210833
NESG210833-A
3-pin minimold
(33 PKG) (Pb-Free)
NESG210833-T1B NESG210833-T1B-A
Quantity
Supplying Form
50 pcs
(Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
<R>
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Base Current Note 1
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
IB
IC
P Note 2
tot
Tj
Tstg
Ratings
5.5
13
5.5
36
100
480
150
−65 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Notes 1. Depend on the ESD protect device.
2. Mounted on 3.8 cm × 9.0 cm ×0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10765EJ02V0DS (2nd edition)
Date Published November 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2009
1 page  
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 5 V,
30 IC = 5 mA
25
20
MSG
MAG
15
|S21e|2
10
MAG
MSG
5
0
0.1 1 10
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 3 V,
f = 1 GHz
MSG
MAG
15
|S21e|2
10
5
0
1 10 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
NESG210833
www.DataSheet4U.com
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 5 V,
30 IC = 30 mA
25
MSG
MAG
20
MAG
15
|S21e|2
10
MSG
5
0
0.1 1
Frequency f (GHz)
10
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 5 V,
f = 1 GHz
MAG
MSG
15
|S21e|2
10
5
0
1 10 100
Collector Current IC (mA)
Data Sheet PU10765EJ02V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NESG210833.PDF ] | |
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