BUK9Y11-30B Datasheet PDF - NXP Semiconductors
| Part Number | BUK9Y11-30B | |
| Description | N-channel TrenchMOS logic level FET | |
| Manufacturers | NXP Semiconductors | |
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BUK9Y11-30B
N-channel TrenchMOS logic level FET
Rev. 01 — 30 August 2007
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance
I 175 °C rated
I Q101 compliant
I Logic level compatible
1.3 Applications
I Automotive systems
I Motors, lamps and solenoids
I General purpose power switching
I 12 V loads
1.4 Quick reference data
I EDS(AL)S ≤ 112 mJ
I ID ≤ 59 A
I RDSon = 9.3 mΩ (typ)
I Ptot ≤ 75 W
2. Pinning information
Table 1. Pinning
Pin Description
1, 2, 3 source (S)
4 gate (G)
mb mounting base; connected to drain (D)
Simplified outline
mb
Symbol
D
G
1234
SOT669 (LFPAK)
mbl798 S1 S2 S3
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NXP Semiconductors
BUK9Y11-30Bwww.DataSheet4U.com
N-channel TrenchMOS logic level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
IDSS drain leakage current
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
IGSS gate leakage current
VGS = ±15 V; VDS = 0 V
RDSon drain-source on-state resistance VGS = 5 V; ID = 25 A; see Figure 6 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 4.5 V; ID = 25 A
VGS = 10 V; ID = 25 A
Dynamic characteristics
QG(tot) total gate charge
QGS gate-source charge
QGD
gate-drain charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
ID = 25 A; VDS = 24 V; VGS = 5 V;
see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
VDS = 25 V; RL = 2.5 Ω;
VGS = 5 V; RG = 10 Ω
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
IS = 25 A; VGS = 0 V; see Figure 15
IS = 20 A; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
Min Typ Max Unit
30 - - V
27 - - V
1.1 1.5 2
V
0.5 - - V
- - 2.3 V
-
0.02 1
µA
- - 500 µA
- 2 100 nA
- 9.3 11 mΩ
- - 21 mΩ
- - 12 mΩ
-
8.1 9
mΩ
- 16.5 - nC
- 3.3 - nC
- 5.4 - nC
- 1211 1614 pF
- 341 409 pF
- 160 220 pF
- 14 - ns
- 33 - ns
- 62 - ns
- 42 - ns
- 0.85 1.2 V
- 47 - ns
- 20 - nC
BUK9Y11-30B_1
Product data sheet
Rev. 01 — 30 August 2007
© NXP B.V. 2007. All rights reserved.
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