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부품번호 | AWT6132R 기능 |
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기능 | 415 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module | ||
제조업체 | ANADIGICS | ||
로고 | |||
전체 8 페이지수
FEATURES
• InGaP HBT Technology
• High Efficiency 35 % CDMA
• Low Leakage Current (<5 µA)
• SMT Module Package
• 50 Ω Input and Output Matching
• Shut Down and Mode Control
• CDMA 2000 1XRTT Compliant
• RoHS Compliant Package, 250 oC MSL-3
APPLICATIONS
• CDMA/EVDO 415 MHz Wireless Handsets and
Data Devices
AWT6132R
415 MHz wCwDwM.DAata3S.h4eVet/42U9.c.o5mdBm
Linear Power Amplifier Module
Data Sheet - Rev 2.1
AWT6132R
M5 Package
7 Pin 6 mm x 6 mm x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6132R is a high power, high efficiency
amplifier module for CDMA wireless handset
applications. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability and
ruggedness. A low power mode is available to reduce
power drain on the system battery. The 6 mm x 6
mm x 1.5 mm laminate package is self contained,
incorporating 50 Ω input and output matching networks
optimized for output power, linearity, and efficiency.
Figure 1: Block Diagram
10/2008
AWT6132R
PARAMETER
Table 4: Electrical Specifications – CDMA Operation
(TC = +25 OC, VCC = +3.4 V, VREF = +2.90 V, 50 Ω system)
www.DataSheet4U.com
MIN TYP MAX UNIT
COMMENTS
Gain
26 28 31
25 27 29
dB
POUT = +29.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.90 V
Gain Variation
- 0.4 1.0 dB
Adjacent Channel Power
at 885 kHz offset (1)
Primary Channel BW = 1.23 MHZ
Adjacent Channel BW = 30 kHz
-
-
-52 -46.5
-57 -47
dB
POUT = +29.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.90 V
Adjacent Channel Power
at 1.98 MHz offset (1)
Primary Channel BW = 1.23 MHZ - -62 -59
Adjacent Channel BW = 30 kHz
- -67 -59
dB
POUT = +29.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.90 V
Power-Added Efficiency (1)
33 35
67
-
-
%
POUT = +29.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.90 V
Quiescent Current (Icq)
- 60 80 mA through VCC pins, VMODE = +2.90 V
Reference Current
- 6.5 9
mA through VREF pin, PA "on"
Mode Control Current
Leakage Current
-
0.8 1.0
mA
through VMODE pin,
VMODE = +2.90 V
- <1 5
A
VCC = +4.2 V, VREF = 0 V,
VMODE = 0 V
Noise in Receive Band
- -132 -130 dBm/Hz fO +10 MHz, POUT < +29.5 dBm
Harmonics
2fo
3fo, 4fo
-
-
-36 -30
-45 -35
dBc POUT < +29.5 dBm
Input Impedance
- - 2:1 VSWR
Spurious Output Level
(all spurious outputs)
POUT < +29.5 dBm
-
-
-70
dBc
In-band Load VSWR < 5:1
Out-of-band Load VSWR < 10:1
Applies over all operating ranges
Load mismatch stress with no
permanent degradation or failure
10:1
-
- VSWR
Notes:
(1) POUT is derated by 0.5 dB for IS-98 / CDMA 2000 operation.
(2) ACPR and Efficiency Measured at 415 MHz.
Applies over all operating ranges
4 MASTER DATA SHEET - Rev 2.1
10/2008
4페이지 COMPONENT PACKAGING
AWT6132R
www.DataSheet4U.com
Figure 6: Tape & Reel Packaging
PACKAGE TYPE
Table 5: Tape & Reel Dimensions
TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA
6 mm x 6 mm x 1.5 mm
12 mm
8 mm
2500
13"
MASTER DATA SHEET - Rev 2.1
10/2008
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ AWT6132R.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
AWT6132R | 415 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module | ANADIGICS |
AWT6132R | 415 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module | ANADIGICS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |