PDF APT50GT120B2RDL Data sheet ( Hoja de datos )

Número de pieza	APT50GT120B2RDL
Descripción	Resonant Mode IGBT
Fabricantes	Microsemi Corporation
Logotipo
Hay una vista previa y un enlace de descarga de APT50GT120B2RDL (archivo pdf) en la parte inferior de esta página. Total 9 Páginas
No Preview Available ! TYPICAL PERFORMANCE CURVES APT5102G0T012V0B2RDL(G) APT50GwTw1w2.D0aBtaS2hReeDt4UL.c(Gom) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® of- fers superior ruggedness and ultrafast switching speed. Features Typical Applications • Low Conduction Loss • SSOA Rated Induction Heating • Low Gate Charge • RoHS Compliant Welding • Ultrafast Tail Current shutoff Medical • Low forward Diode Voltage (VF) • Ultrasoft Recovery Diode High Power Telecom Resonant Mode Phase Shifted Bridge C G E MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise speciﬁed. Symbol Parameter APT50GT120B2RDL(G) UNIT VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 8 @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 1200 ±30 106 50 150 150A @ 1200V 694 -55 to 150 300 Volts Amps Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX V(BR)CES VGE(TH) VCE(ON) I CES I GES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3mA) Gate Threshold Voltage (VCE = VGE, I C = 2mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor 1200 4.5 5.5 6.5 2.7 3.2 3.7 4.0 300 1500 300 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Units Volts μA nA Ω Microsemi Website - http://www.microsemi.com 1 page TYPICAL PERFORMANCE CURVES 4,000 Cies 1,000 500 Coes Cres 100 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage APT50GT120B2RDL(G) 160 140 www.DataSheet4U.com 120 100 80 60 40 20 0 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.20 0.16 D = 0.9 0.12 0.08 0.04 0 10-5 0.7 0.5 Note: 0.3 t1 0.1 0.05 SINGLE PULSE t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 140 50 F max = min (fmax, f max2) 0.05 fmax1 = t d(on) + tr + td(off) + tf 10 TJ = TC = 125°C 75°C fmax2 = Pdiss - P cond E on2 + E off D = 50 % VCE = 800V 4 RG = 5Ω Pdiss = TJ - T C R θJC 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet APT50GT120B2RDL.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
APT50GT120B2RDL	Resonant Mode IGBT	Microsemi Corporation
APT50GT120B2RDLG	Resonant Mode IGBT	Microsemi Corporation
APT50GT120B2RDQ2G	Thunderbolt IGBT	Microsemi Corporation

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar