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PDF APTGF150DA120TG Data sheet ( Hoja de datos )
| Número de pieza | APTGF150DA120TG | |
| Descripción | Boost chopper NPT IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGF150DA120TGwww.DataSheet4U.com
Boost chopper
NPT IGBT Power Module
VCES = 1200V
IC = 150A @ Tc = 80°C
VBUS SENSE
VBUS
NT C2
CR1
Q2
G2
E2
0/VBU S
OUT
NT C1
VBUS
VBUS
SENSE
G2
E2
0/VBUS
E2
G2
OUT
OUT
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
200
150
300
±20
961
300A @ 1200V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGF150DA120TGwww.DataSheet4U.com
Operating Frequency vs Collector Current
100
90
80
70
60
50
ZCS
ZVS
VCE=600V
D=50%
RG=5.6 Ω
TJ=125°C
TC=75°C
40
30 hard
20 switching
10
0
0 40 80 120 160 200
IC (A)
Forward Characteristic of diode
500
400
300
TJ= 125°C
200
100 TJ=25°C
0
0 0.5 1 1.5 2 2.5 3
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3 0.9
Diode
0.25 0.7
0.2 0.5
0.15
0.3
0.1
0.1
0.05 0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGF150DA120TG.PDF ] | |
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