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PDF APTGF300DU120G Data sheet ( Hoja de datos )
| Número de pieza | APTGF300DU120G | |
| Descripción | Dual Common Source NPT IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGF300DU120Gwww.DataSheet4U.com
Dual Common Source
NPT IGBT Power Module
VCES = 1200V
IC = 300A @ Tc = 80°C
Application
C1 C2
Q1
Q2
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G1 G2
Features
E1
• Non Punch Through (NPT) FAST IGBT
E2 - Low voltage drop
- Low tail current
E - Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
G1 VBUS
E1
0/VBUS
OUT
• High level of integration
Benefits
E2 • Outstanding performance at high frequency
G2 operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
400
300
600
±20
1780
600A @ 1200V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGF300DU120Gwww.DataSheet4U.com
Operating Frequency vs Collector Current
100
VCE=600V
80
D=50%
RG=3 Ω
ZVS
TJ =125°C
60 TC=75°C
40
hard
switching
20
ZCS
0
0 50 100 150 200 250 300 350
IC (A)
Forward Characteristic of diode
600
500
400 TJ=125°C
300
200 TJ=25°C
100
0
0 0.5 1 1.5 2 2.5 3
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.14
0.12 0.9
0.1 0.7
0.08
0.5
0.06
0.3
0.04
0.02 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
Diode
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGF300DU120G.PDF ] | |
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